characteristic / test conditions / part number drain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain current 2 (v ds > i d (on) x r ds (on) max, v gs = 15v) drain-source on-state resistance 2 (v gs = 15v, 29a) zero gate voltage drain current (v ds = 500v, v gs = 0v) zero gate voltage drain current (v ds = 400v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as static electrical characteristics maximum ratings all ratings: t c = 25c unless otherwise speciied. 050-5896 rev f 11-2013 min typ max 500 58 0.09 25 250 100 2 4 unit volts amps ohms a na volts symbol bv dss i d (on) r ds (on) i dss i gss v gs (th) linear mosfet linear mosfets are optimized for applications operating in the linear region where concurrent high voltage and high current can occur at near dc conditions (>100 msec). ? higher fbsoa ? higher power dissipation ? popular t-max? or to-264 package unit volts amps volts watts w/c c amps mj apl502b2_l(g) 500 58 232 30 40 730 5.84 -55 to 150 300 58 50 3000 b2 apl502b2(g) apl502l(g) 500v 58a 0.090 l ? rohs compliant microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. t-ma x tm to-264 g d s downloaded from: http:///
dynamic characteristics apl502b2_l(g) 050-5896 rev f 11-2013 symbol c iss c oss c rss t d (on) t r t d (off) t f min typ max 7485 9000 1290 1810 617 930 13 26 27 54 56 84 16 20 unit pf ns test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 15v v dd = 250v i d = 29a @ 25c r g = 0.6 characteristicinput capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time thermal characteristics 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 1.78mh, r g = 25 , peak i l = 58a 2 pulse test: pulse width < 380 s, duty cycle < 2% microsemi reserves the right to change, without notice, the speciications and information contained herein. 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.180.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.5 0.1 0.3 0.7 d = 0.9 0.05 z jc , thermal impedance (c/w) single pulse figure 1a, transient thermal impedance model 0.0602 0.109 0.0158 0.305 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink,sink to ambient, etc. set to zero when modeling only the case to junction. z ext characteristicjunction to case package weight symbol r jc w t min typ max .17 0.22 5.9 unit c/w oz g peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : downloaded from: http:///
r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle t j = +125c t j = +25c t j = -55c v gs =10v v gs =20v normalized to v gs = 10v @ 29a 050-5896 rev f 11-2013 typical performance curves v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature 0 2 4 6 8 10 0 20 40 60 80 100 120 25 50 75 100 125 150 -50 0 50 100 150 1.301.20 1.10 1.00 0.90 0.80 0.70 1.15 1.10 1.05 1.00 0.95 0.90 8060 40 20 0 6050 40 30 20 10 0 apl502b2_l(g) 120100 8060 40 20 0 120100 8060 40 20 0 0 50 100 150 200 250 0 5 10 15 20 25 30 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, high voltage output characteristics figure 3,low voltage output characteristics 7 v 6 v 6.5 v v gs =10v, 15 v 5.5 v 7 v 6 v 6.5 v 5.5 v 7.5 v v gs =10, 15v 7.5 v 8 v 8 v -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature i d = 29a v gs = 12v 1.21.1 1.0 0.9 0.8 0.7 0.6 2.52.0 1.5 1.0 0.5 0.0 downloaded from: http:///
apl502b2_l(g) 050-5896 rev f 11-2013 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090)2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122)3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline i d , drain current (amperes) c, capacitance (pf) 400100 10 1 0.1 400100 10 1 0.1 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, forward safe operating area figure 11, maximum forward safe operating area .01 .1 1 10 50 c, capacitance (pf) 30,00010,000 5,0001,000 500100 v ds , drain-to-source voltage (volts) figure 12, capacitance vs drain-to-source voltage scaling for different case & junction temperatures: i d = i d (tc = 25c) *(t c - t j )/125 t j = 125 c t c = 75 c dc line 10ms 1ms 100s 13s r ds(on) i dm 1 10 100 800 1 10 100 800 dc line 100ms 10ms 100s 13s r ds(on) i dm c iss c oss c rss 100ms 1ms t j = 150 c t c = 25 c downloaded from: http:///
050-5896 rev f 11-2013 apl502b2_l(g) the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information co ntained herein may not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in wri ting signed by an oficer of microsemi.microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to itness for a particular purp ose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers inal application. user or customer shall not rely on any data and performance speciications or parameters provided by microsem i. it is the customers and users re - sponsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi speciically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp disclaimer: downloaded from: http:///
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